unisonic technologies co., ltd UTT200N02 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-576.a 200 a, 20 v n-channel power mosfet ? description the utc UTT200N02 is an n-channel power mosfet using utc?s advanced technology to provide customers with a minimum on-state resistance and superi or switching performance. the utc UTT200N02 is generally applied in synchronous rectification or dc to dc convertor. ? features * v ds = 20v * i d = 200a * r ds(on) =2.0m ? (typ.) @ v gs =10v * low gate charge (typical 84nc) * high switching speed * high power and current handling capability * rohs compliant ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT200N02l-ta3-t UTT200N02g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT200N02 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-576.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 20 v continuous (silicon limited) i d 200 (note 2) a drain current pulsed (note 3) i dm 800 a single pulsed avalanche energy (note 4) e as 864 mj peak diode recovery dv/dt (note 5) dv/dt 6.0 v/ns power dissipation 214 w derate above 25c p d 1.43 w/c junction temperature t j +150 c storage temperature range t stg -55~+175 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. calculated continuous current based on maximu m allowable junction temperature. package limitation current is 100a. 3. repetitive rating: pulse width lim ited by maximum junction temperature 4. l = 3mh, i as =24a, v dd = 20v, r g = 25 ? , starting t j = 25c 5. i sd 200a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.7 c/w
UTT200N02 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-576.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 20 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 30 mv/c drain-source leakage current i dss v ds =20v, v gs =0v 10 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =80a 2.0 2.4 m ? dynamic parameters input capacitance c iss 5490 7300 pf output capacitance c oss 1220 1620 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 155 233 pf switching parameters total gate charge at 10v q g(tot) 84 109 nc gate to source charge q gs 19 nc gate charge threshold to plateau q gs2 9.5 nc gate to drain charge q gd v gs =10v, v ds =16v, i d =80a (note 1, 2) 12 nc turn-on delay time t d(on) 17 44 ns rise time t r 8 26 ns turn-off delay time t d(off) 71 152 ns fall-time t f v dd =10v, i d =80a, r gen =4.7 ? , v gs =10v (note 1, 2) 17 44 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 200 a maximum body-diode pulsed current i sm 800 a drain-source diode forward voltage v sd i sd =200a, v gs =0v 1.3 v notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperatur e typical characteristics
UTT200N02 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-576.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
UTT200N02 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-576.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
UTT200N02 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-576.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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